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Cobalt-based Heusler compounds in magnetic tunnel junctions
Industrial applicability
seed layer verification
Publications and Conferences
The optimal seed layer system
Optimization of the Heusler layer
thickness dependence
annealing temperature dependence
Various Co-based Heusler compounds
film stoichiometry
crystalline growth
magnetic properties
different compositions of Co-Fe-Si
Transport properties
annealing temperature stability
temperature stable counter electrode
in-situ annealing
lowering the crystallization temperature
temperature dependence of the TMR ratio
bias voltage dependence of the TMR ratio
spin polarization
off-stoichiometrical composition
double Heusler junctions
Industrial applicability
seed layer verification
properties of industrially prepared Heusler layers
Conclusions
Appendix
data summary
XAS and XMCD
selected publications
Dissertation
Cobalt-based Heusler compounds in magnetic tunnel junctions
Entstehung
2010
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