Anjum, Taseer: Nanomechanics: Mechanical response analysis of semiconductor GaAs nanowires by using finite element method and x-ray diffraction techniques. 2021
Inhalt
- Zusammenfassung
- Abstract
- Contents
- Publications
- List of Figures
- List of Tables
- Acknowledgments
- Introduction
- Semiconductor Nanowires
- Kinematic X-ray Diffraction
- Crystal planes and reciprocal lattice
- X-ray diffraction
- Bragg Coherent Diffraction Imaging
- Scanning x-ray diffraction microscopy
- Experimental methods
- Dual Beam Focused Ion Beam / Scanning Electron Microscopy (FIB/SEM) system
- Scanning force microscopy of in-situ nano-focused X-ray diffraction
- P23 beamline at PETRAIII
- Electromechanical Resonance In Nanowires
- Fundamental theory of Resonance
- Damping and its impact on quality factor
- Electromechanical resonance in FIB/SEM
- Anelasticity In Semiconductor Nanowires
- Anelasticity in semiconductor nanowires
- Anelasticity tests in FIB/SEM system
- Mathematical Modeling
- Finite element method modelling
- Results and discussion
- Three point bending test on Be doped GaAs nanowires
- Introduction and objective
- Sample preparation: Be-doped GaAs Nanowires
- Lateral three-point bending test by symmetric X-ray diffraction experiment
- Results and postmortem of nanowires in FIB/SEM
- Conclusion
- References
- Acronyms