Sant, Tushar: Reconstruction of surface morphology from coherent scattering of "white" synchrotron radiation in hard x-ray regime. 2009
Inhalt
- Abstract
- Abstrakt
- Table of Contents
- Chapter 1: Introduction
- Chapter 2: Theoretical Background
- 2.1.1 Refractive Index
- 2.2 X-ray Coherence
- 2.2.1 Transverse Coherence Length
- 2.2.2 Longitudinal Coherence Length
- 2.3 The interference of partially coherent waves, mutual coherencefunction and complex degree of coherence
- 2.4 Coherent Scattering versus Incoherent Scattering
- 2.4.1 Static Speckles
- 2.5 Phase Retrieval
- 2.5.1 Uniqueness and Oversampling
- 2.6 References
- Chapter 3: Experimental Details
- 3.1 Energy Dispersive Reflectometry (EDR) beamline
- 3.2 Experimental scans
- 3.3 Diffraction from entrance pinhole
- 3.4 Demonstration of energy dispersive techniques: EDSAXS
- 3.5 References
- Chapter 4: Static speckle measurements from various test surfaces
- 4.1 Typical measurement
- 4.2 Flat surface as a reflecting mirror
- 4.3 Lateral periodic surface
- 4.4 Pt thin layer on Glass
- 4.5 Spatially confined Si wafer
- 4.6 Spatially confined GaAs grating
- 4.7 References
- Chapter 5: Surface profile reconstruction from coherent x- rayreflectivity
- 5.1 Reflected image of illumination function from a flat surface
- 5.2 Single surface with random steps of different widths and differentheights
- 5.3 Scattering amplitude in the near field based on Fresnel electrondensity
- 5.3.1 The formalism based on the Fresnel electron density
- 5.3.2 Calculations based on the Fresnel electron density formalism
- 5.4 Reconstruction using phase retrieval
- 5.4.1 Reconstruction of object electron density from near-field diffraction
- 5.4.2 Reconstruction from near-field diffraction in reflection geometry
- 5.5 Reconstruction of surface height profile from near-field diffraction
- 5.6 References
- Chapter 6: Surface height profile reconstruction from the measured surfacespeckle data
- 6.1 Reconstruction of surface profile from selected measurements
- 6.1.1 GaAs plain wafer αi = 0.2°
- 6.1.2 GaAs Grating at αi = 0.1°
- 6.1.3 GaAs Grating αi = 0.25°
- 6.1.4 Triangular shaped Si wafer with sample width 0.8 mm
- 6.1.5 Triangular shaped Si wafer with sample width 2.3 mm
- 6.1.6 Triangular shaped Si wafer with sample width > footprint
- 6.1.7 Spatially confined GaAs grating with sample width 1.6 mm
- 6.2 References
- Chapter 7: Summary and outlook
- Appendix A
- Acknowledgements
- Eidesstattliche erklärung